JPS5864047A - マスタ−スライス半導体集積回路装置 - Google Patents

マスタ−スライス半導体集積回路装置

Info

Publication number
JPS5864047A
JPS5864047A JP56163005A JP16300581A JPS5864047A JP S5864047 A JPS5864047 A JP S5864047A JP 56163005 A JP56163005 A JP 56163005A JP 16300581 A JP16300581 A JP 16300581A JP S5864047 A JPS5864047 A JP S5864047A
Authority
JP
Japan
Prior art keywords
transistors
gate
conductivity type
polysilicon
gate polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56163005A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0252428B2 (en]
Inventor
Kunimitsu Fujiki
藤木　國光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56163005A priority Critical patent/JPS5864047A/ja
Publication of JPS5864047A publication Critical patent/JPS5864047A/ja
Publication of JPH0252428B2 publication Critical patent/JPH0252428B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP56163005A 1981-10-13 1981-10-13 マスタ−スライス半導体集積回路装置 Granted JPS5864047A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56163005A JPS5864047A (ja) 1981-10-13 1981-10-13 マスタ−スライス半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56163005A JPS5864047A (ja) 1981-10-13 1981-10-13 マスタ−スライス半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5864047A true JPS5864047A (ja) 1983-04-16
JPH0252428B2 JPH0252428B2 (en]) 1990-11-13

Family

ID=15765380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56163005A Granted JPS5864047A (ja) 1981-10-13 1981-10-13 マスタ−スライス半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5864047A (en])

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961047A (ja) * 1982-09-29 1984-04-07 Hitachi Ltd 半導体集積回路装置
JPS59127848A (ja) * 1983-01-13 1984-07-23 Seiko Epson Corp 半導体装置
JPS61245548A (ja) * 1985-04-23 1986-10-31 Mitsubishi Electric Corp 半導体集積回路装置
US4716450A (en) * 1984-06-26 1987-12-29 Nec Corporation Semiconductor integrated circuit having complementary field effect transistors
US4779231A (en) * 1985-12-06 1988-10-18 Siemens Aktiengesellschaft Gate array arrangement in complementary metal-oxide-semiconductor technology
US4816887A (en) * 1983-07-09 1989-03-28 Fujitsu Limited CMOS gate array with orthagonal gates
US5117277A (en) * 1989-01-27 1992-05-26 Hitachi, Ltd. Semiconductor integrated circuit device with improved connection pattern of signal wirings
US5136356A (en) * 1989-04-19 1992-08-04 Seiko Epson Corporation Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211248A (en) * 1981-06-22 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211248A (en) * 1981-06-22 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961047A (ja) * 1982-09-29 1984-04-07 Hitachi Ltd 半導体集積回路装置
JPS59127848A (ja) * 1983-01-13 1984-07-23 Seiko Epson Corp 半導体装置
US4816887A (en) * 1983-07-09 1989-03-28 Fujitsu Limited CMOS gate array with orthagonal gates
US4716450A (en) * 1984-06-26 1987-12-29 Nec Corporation Semiconductor integrated circuit having complementary field effect transistors
JPS61245548A (ja) * 1985-04-23 1986-10-31 Mitsubishi Electric Corp 半導体集積回路装置
US4779231A (en) * 1985-12-06 1988-10-18 Siemens Aktiengesellschaft Gate array arrangement in complementary metal-oxide-semiconductor technology
US5117277A (en) * 1989-01-27 1992-05-26 Hitachi, Ltd. Semiconductor integrated circuit device with improved connection pattern of signal wirings
US5136356A (en) * 1989-04-19 1992-08-04 Seiko Epson Corporation Semiconductor device

Also Published As

Publication number Publication date
JPH0252428B2 (en]) 1990-11-13

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